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ITCH20180B2E

Innogration
Part Number ITCH20180B2E
Manufacturer Innogration
Description High Power RF LDMOS FET
Published Aug 5, 2018
Detailed Description Innogration (Suzhou) Co., Ltd. Document Number: ITCH20180B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 180W, 28V High...
Datasheet PDF File ITCH20180B2E PDF File

ITCH20180B2E
ITCH20180B2E

Overview
Innogration (Suzhou) Co.
, Ltd.
Document Number: ITCH20180B2 Preliminary Datasheet V1.
0 1800MHz-2000MHz, 180W, 28V High Power RF LDMOS FETs Description The ITCH20180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz.
It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITCH20180B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=10 us, Duty cycle=12% .
Frequency Gp (dB) P-1dB (dBm) D@P-1 (%) P-3dB (dBm) D@P-3 (%) 1805 MHz 18.
2 52.
0 50.
8 53.
4 55.
9 ...


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