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ITCH16230B2E

Innogration
Part Number ITCH16230B2E
Manufacturer Innogration
Description High Power RF LDMOS FET
Published Aug 5, 2018
Detailed Description Innogration (Suzhou) Co., Ltd. Document Number: ITCH16230B2 Preliminary Datasheet V1.1 1300MHz-1700MHz, 230W, 28V High...
Datasheet PDF File ITCH16230B2E PDF File

ITCH16230B2E
ITCH16230B2E

Overview
Innogration (Suzhou) Co.
, Ltd.
Document Number: ITCH16230B2 Preliminary Datasheet V1.
1 1300MHz-1700MHz, 230W, 28V High Power RF LDMOS FETs Description The ITCH16230B2 is a 230-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1700 MHz.
It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITCH16230B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 100 mA,CW.
Frequency Gp (dB) POUT (W ) D@ (%) 1470 MHz 16.
5 240 62.
2 1500 MHz 15.
9 214 62.
1 1525 MHz 15.
4 191 62.
4 Typical Performance (On Inno...


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