High Power RF LDMOS FET
Description
Innogration (Suzhou) Co., Ltd.
Document Number: ITBH09150B Product Datasheet V2.0
700MHz-1000MHz, 150W, 28V High Power RF LDMOS FETs
Description
The ITBH09150B is a 150-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz. It Can be used in Class AB/B and Class C f...
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