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VTSU01900

Innogration
Part Number VTSU01900
Manufacturer Innogration
Description RF Power N-channel MOSFET
Published Aug 5, 2018
Detailed Description Innogration (Suzhou) Co., Ltd. 900W, 100V RF Power N-channel MOSFETs Description The VTSU01900 is a 900-watt, N-channe...
Datasheet PDF File VTSU01900 PDF File

VTSU01900
VTSU01900

Overview
Innogration (Suzhou) Co.
, Ltd.
900W, 100V RF Power N-channel MOSFETs Description The VTSU01900 is a 900-watt, N-channel MOSFETs, designed for pulsed or CW applications at frequencies up to 200 MHz.
It’s suitable for use in industrial, scientific and medical applications.
 Typical Performance (In Demo Fixture): VDD = 100 Volts, IDQ = 500 mA, Pulse CW, Pulse Width=1ms, Duty cycle=10% Frequency Gp (dB) POUT (W) D (%) 120 MHz 20 900 65 Typical Performance (In Demo Fixture): VDD = 100 Volts, IDQ = 500 mA, CW Frequency Gp (dB) POUT (W) D (%) 120 MHz 24 550 68 Features  Common source configuration, push pull  Excellent thermal stability, low HCI drift  Low RDS(on)  Pb...


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