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PDS2603

Potens semiconductor
Part Number PDS2603
Manufacturer Potens semiconductor
Description P-Channel MOSFETs
Published Aug 18, 2018
Detailed Description 20V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using tre...
Datasheet PDF File PDS2603 PDF File

PDS2603
PDS2603

Overview
20V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOP8 Pin Configuration DDDD S SSG G D S PDS2603 BVDSS -20V RDSON 8.
5m ID -14A Features  -20V,-14A, RDS(ON) =8.
5mΩ@VGS = -4.
5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for -1.
8V Gate Drive Applications Applications  Notebook  Load Swit...


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