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HY3810M

Part Number	HY3810M
Manufacturer	HOOYI
Description	N-Channel Enhancement Mode MOSFET
Published	Aug 19, 2018
Detailed Description	HY3810P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) ...
Datasheet	HY3810M PDF File

Overview

HY3810P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 100 ±25 175 -55 to 175 180 IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 720** 180 132 346 173 0.
43 62.
5 EAS Avalanche Energy, Single Pulsed L=0.
5mH Note * Repetitive rating ; pulse width limiited by jun...

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