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VS3506AT

Vanguard Semiconductor
Part Number VS3506AT
Manufacturer Vanguard Semiconductor
Description P-Channel Advanced Power MOSFET
Published Aug 19, 2018
Detailed Description Features  P-Channel，-5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switchin...
Datasheet PDF File VS3506AT PDF File

VS3506AT
VS3506AT

Overview
Features  P-Channel，-5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=-4.
5 V  Fast Switching and High efficiency  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VS3506AT -30V/-100A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.
5V ID -30 V 6.
2 mΩ 10 mΩ -100 A TO-220AB Part ID VS3506AT Package Type TO-220AB Marking 3506AT Tape and reel information 50pcs/Tube Maximum ratings, at T A =25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=-10V IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=-10V EAS Avalanche energy, single pulsed ② PD PDSM Maximum power dissipation Maximum power dissipation ③ TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics RJC Thermal Resistance, Junction-to-Case RJA T...


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