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VST008N10HS

Vanguard Semiconductor
Part Number VST008N10HS
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Aug 19, 2018
Detailed Description Features  N-Channel，10V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=10 V  VitoMOS® Ⅱ...
Datasheet PDF File VST008N10HS PDF File

VST008N10HS
VST008N10HS

Overview
Features  N-Channel，10V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=10 V  VitoMOS® ⅡTechnology  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VST008N10HS 100V/105A N-Channel Advanced Power MOSFET V DS 100 V R @DS(on),TYP VGS=10 V 6.
2 mΩ I D 105 A TO-220AB Part ID VST008N10HS Package Type TO-220AB Marking 008N10H Tape and reel information 50pcs/Tube Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C ...


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