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VST008N10MS

Vanguard Semiconductor
Part Number VST008N10MS
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Aug 19, 2018
Detailed Description Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ...
Datasheet PDF File VST008N10MS PDF File

VST008N10MS
VST008N10MS

Overview
Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.
5 V  VitoMOS® ⅡTechnology  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VST008N10MS 100V/105A N-Channel Advanced Power MOSFET V DS 100 V R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.
5 V 5.
7 mΩ 7 mΩ I D 105 A TO-220AB Part ID VST008N10MS Package Type TO-220AB Marking 008N10M Tape and reel information 50pcs/Tube Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=10V EAS Avalanche energy, single pulsed ② PD Maximum power dissipation PDSM Maximum power dissipation ③ TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics Symbol Parameter RJC Thermal Resistance, Junction...


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