Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Description
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VB60100C-M3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.36 V at IF = 5 A
TMBS ®
TO-263AB K
2 1
FEATURES
Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Meets MSL level 1, per J-STD-020, LF maximum
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