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D857

Part Number	D857
Manufacturer	INCHANGE
Description	Silicon NPN Power Transistor
Published	Aug 30, 2018
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD857 DESCRIPTION ·Collector-Emitte...
Datasheet	D857 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD857 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB762 APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 60 V 5V IC Collector Current-Continuous 4A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
cn 1 INCHAN...

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