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ST2317S23RG

Stanson Technology
Part Number ST2317S23RG
Manufacturer Stanson Technology
Description P-Channel Enhancement Mode MOSFET
Published Sep 3, 2018
Detailed Description ST2317S23RG P Channel Enhancement Mode MOSFET -5.0A DESCRIPTION ST2317S23RG is the P-Channel logic enhancement mode powe...
Datasheet PDF File ST2317S23RG PDF File

ST2317S23RG
ST2317S23RG

Overview
ST2317S23RG P Channel Enhancement Mode MOSFET -5.
0A DESCRIPTION ST2317S23RG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are required in a very small outline surface mount package.
PIN CONFIGURATION SOT-23-3L 3 D G 1 S 2 1.
Gate 2.
Source 3.
Drain PART MARKING SOT-23-3L 3 17YW 12 Y: Year Code W: Week Code FEATURE l -40V/-5.
0A, RDS(ON) = 37mΩ (Typ.
) @VGS = -10V l -40V/-3.
0A, RDS(ON) = 51mΩ @VGS = -4.
5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOT-23 package design STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94...


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