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ST2319SRG

Stanson Technology
Part Number ST2319SRG
Manufacturer Stanson Technology
Description P-Channel Enhancement Mode MOSFET
Published Sep 3, 2018
Detailed Description ST2319SRG P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2319SRG is the P-Channel logic enhancement mode power fi...
Datasheet PDF File ST2319SRG PDF File

ST2319SRG
ST2319SRG

Overview
ST2319SRG P Channel Enhancement Mode MOSFET -3.
5A DESCRIPTION ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are required in a very small outline surface mount package.
PIN CONFIGURATION SOT-23 3 D GS 12 1.
Gate 2.
Source 3.
Drain PART MARKING SOT-23 3 19YW 12 Y: Year Code W: Week Code FEATURE -40V/-3.
5A, RD...


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