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T2N7002BK

Toshiba
Part Number T2N7002BK
Manufacturer Toshiba
Description Silicon N-Channel MOSFETs
Published Sep 7, 2018
Detailed Description MOSFETs Silicon N-Channel MOS T2N7002BK 1. Applications • High-Speed Switching 2. Features (1) ESD(HBM) level 2 kV (2) L...
Datasheet PDF File T2N7002BK PDF File

T2N7002BK
T2N7002BK

Overview
MOSFETs Silicon N-Channel MOS T2N7002BK 1.
Applications • High-Speed Switching 2.
Features (1) ESD(HBM) level 2 kV (2) Low drain-source on-resistance : RDS(ON) = 1.
05 Ω (typ.
) (@VGS = 10 V) RDS(ON) = 1.
15 Ω (typ.
) (@VGS = 5.
0 V) RDS(ON) = 1.
2 Ω (typ.
) (@VGS = 4.
5 V) 3.
Packaging and Internal Circuit SOT23 T2N7002BK 1: Gate 2: Source 3: Drain ©2015-2017 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2015-05 2017-11-30 Rev.
2.
0 T2N7002BK 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20 Drain current (DC) Drain current (pulsed...


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