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GSM4422

Globaltech
Part Number GSM4422
Manufacturer Globaltech
Description N-channel MOSFET
Published Sep 9, 2018
Detailed Description 30V N-Channel Enhancement Mode MOSFET Product Description GSM4422, N-Channel enhancement mode MOSFET, uses Advanced Tre...
Datasheet PDF File GSM4422 PDF File

GSM4422
GSM4422

Overview
30V N-Channel Enhancement Mode MOSFET Product Description GSM4422, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Packages & Pin Assignments GSM4422SF (SOP-8) Features  30V/ 6.
8A,RDS(ON)=36mΩ@VGS=10V  30V/ 6.
0A,RDS(ON)=42mΩ@VGS=4.
5V  30V/ 5.
2A,RDS(ON)=50mΩ@VGS=2.
5V  Super high density cell design for extremely low RDS (ON)  SOP-8P package design Applications  DC/DC Converter  Load Switch  CCFL Inverter  Power Management in Notebook Computer GSM4422 1 Source 5 Drain 2 Source 6 Drain 3 Source 7 Drain 4 Gate 8 Drain Ordering Information GS P/N GSM4422 S F Package Code Pb Free Code www.
gs-power.
com 1 Marking Information Absolute Maximum Ratings (TA=25ºC unless otherwise noted) Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25ºC TA=70ºC Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature TA=25ºC TA=70ºC Storage Temperature Range Thermal Resistance-Junction to Ambient Typical 30 ±12 6.
8 5.
2 30 2.
6 2.
8 1.
8 150 -55/150 62.
5 Unit V V A A A W ºC ºC ºC/ W GSM4422 www.
gs-power.
com 2 Electrical Characteristics (TA=25ºC unless otherwise noted) Symbol Parameter Conditions Static V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID=250uA VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD Gate Threshold Voltage VDS=VGS,ID=250uA Gate Leakage Current VDS=0V,VGS=±12V Zero Gate Voltage Drain Current VDS=24V,VGS=0V VDS=24V,VGS=0V TJ=85℃ On-State Drain Current VDS≧5V,VGS=10V VGS=10V,ID=6.
8A Drain-Source On-Resistance VGS=4.
5V,ID=6.
0A VGS=2.
5V,ID=5.
2A Forward Transconductance VDS=10V,ID=5.
0A Diode Forward Voltage IS=3.
4A,VGS=0V Dynamic Ciss Coss Crss Qg Qgs Qgd Input Cap...


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