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GSM2312P

Globaltech
Part Number GSM2312P
Manufacturer Globaltech
Description N-Channel MOSFET
Published Sep 9, 2018
Detailed Description GSM2312P 20V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are ...
Datasheet PDF File GSM2312P PDF File

GSM2312P
GSM2312P

Overview
GSM2312P 20V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
Features „ 20V, 6.
7A, RDS(ON)=19mΩ@VGS=4.
5V „ Improved dv/dt capability „ Fast switching „ Suit for 1.
8V Gate Drive Applications „ Green Device Available „ SOT-23 package design Applications „ Notebook „ Load Switch „ Hand-Held Instruments Packages & Pin Assignments GSM2...


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