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GSMDS2603

Globaltech
Part Number GSMDS2603
Manufacturer Globaltech
Description P-Channel MOSFET
Published Sep 9, 2018
Detailed Description GSMDS2603 20V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are...
Datasheet PDF File GSMDS2603 PDF File

GSMDS2603
GSMDS2603

Overview
GSMDS2603 20V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
Features  -20V, -14A, RDS(ON)=8.
5mΩ@VGS=-4.
5V  Improved dv/dt capability  Fast switching  Suit for -1.
8V Gate Drive Applications  Green Device Available  SOP-8 package design Applications  Notebook  Load Switch  Networking  Hand-Held Instruments Packages & Pin...


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