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ADM2P06W

ADV
Part Number ADM2P06W
Manufacturer ADV
Description P-Channel MOSFET
Published Sep 11, 2018
Detailed Description                         ADV     ADM2P06W  P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMM...
Datasheet PDF File ADM2P06W PDF File

ADM2P06W
ADM2P06W


Overview
                        ADV     ADM2P06W  P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS -60V ID -2.
3A RDS(ON) (mΩ) 180mΩ Features: ● Excellent Cdv/dt effect decline ● Super Low Gate Charge ●100% EAS Guaranteed ● Advanced Trench technology ● Lead-Free,RoHS Compliant SOT223 1  1  2  2  3  3  2 Description: The ADM2P06W is the high cell density trenchedP-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
The ADM2P06W meets the RoHS and Green Product requirement with full function reliability approved.
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current(1,4) TC =25°C Mounted on Large Heat Sink IDM 300μs Pulse Drain ...



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