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ADM45N06E

ADV
Part Number ADM45N06E
Manufacturer ADV
Description N-Channel MOSFET
Published Sep 11, 2018
Detailed Description                         ADV     ADM45N06E  N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 6...
Datasheet PDF File ADM45N06E PDF File

ADM45N06E
ADM45N06E

Overview
                        ADV     ADM45N06E  N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 46A RDS(ON) (mΩ) 18mΩ TO252 2 1  2  3 Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested⑴ TC=25°C ID Continuous Drain Current TC=25°C PD Maximum Power Dissipation 1.
Pulse width limited by maximum junction temperature.
TC=25°C Thermal Characteristics Symbol Parameter RthJC RthJA Thermal resistance junction-case max Thermal resistance junction-ambient max Ratings 60 ±20 150 -55 to 175 46 183 46 75 Ratings 2.
0 40 Unit V °C °C A A A W Unit °C/W °C/W   1/6 www.
advsemi.
com Ver.
0.
11                         ...


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