ADV ADM3904E
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Fast Switching Ultra Low On-Resistance Optimized BVDSS Ruggedness Lead Free
PRODUCT SUMMARY
VDSS 40V
ID 116A
RDS(ON) (mΩ) 3. 9mΩ
TO252
2
1 2 3
Absolute Maximum Ratings ( Tc = 25°C unless otherwise specified )
Symbol
Parameter
Common Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested⑴
ID Continuous Drain Current
TC=25°C Silicon Limited Package Limited
PD Maximum Power Dissipation 1. Pulse width limited by maximum junction temperature.
TC=25°C
Thermal Characteristics
Symbol
Parameter
RthJC RthJA
Thermal resistance junction-case max Thermal resistance junction-...
ADM3904E PDF File
