RF POWER transistor
Description
PD54008-E
RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 8 W with 11.5dB gain @ 500 MHz/7.5 V ■ New RF plastic package
Description
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is desi...
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