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D5850

PHENITEC
Part Number D5850
Manufacturer PHENITEC
Description Silicon NPN transistor
Published Sep 23, 2018
Detailed Description Go to Home Page D5850 Silicon NPN transistor epitaxial type D5850 [ Applications ] General purpose transistors Medium...
Datasheet PDF File D5850 PDF File

D5850
D5850

Overview
Go to Home Page D5850 Silicon NPN transistor epitaxial type D5850 [ Applications ] General purpose transistors Medium power amplifire and switching [ Feature ] High collector-emitter beak-down voltage BVCEO= 80V High emitter-base break-down voltage BVEBO= 8V Low collector saturation voltage VCE(sat)= 0.
14V (Typ.
) at IC= 500mA, IB= 50mA Complimentary pair with phenitec P/N B5850 [ Absolute maximum ratings (Ta=25C) ] Characteristic Symbol Collector-base voltage VCBO Collector-emitter voltage VCEO Emitter-base voltage VEBO Collector current IC Junction temperature Tj Storage temperature Tstg Maximum ratings 80 80 8 700 150 -55 to 150 Unit V V V mA C C [ Electrical characteristics (Ta=25C) ] Characteristic Symbol Min.
Typ.
Max.
Unit Conditions Collector-base breakdown voltage BVCBO 80 - - V IC= 50uA, IE= 0A Collector-emitter breakdown voltage BVCEO 80 - - V IC= 2mA, IB= 0A Emitter-base breakdown voltage BVEBO 8 - - V IE= 50uA, IC= 0A Collector cut-off cu...


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