N-Channel MOSFET
Description
PFU3N95EG
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 15.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 5.4 Ω (Typ.) @VGS=10V Halogen Free
APPLICATION
Low power battery chargers Switch mode power s...
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