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PFI7N80G

N-Channel MOSFET

Description

June 2007 PFI7N80G / PFB7N80G FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 35 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.55 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitab...

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