N-Channel MOSFET
Description
Sep 2012
PFP6N70E / PFF6N70E
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 17 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.50 Ω (Typ.) @VGS=10V
APPLICATION
High current, High speed switching Suitabl...
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