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PFF2N70

N-Channel MOSFET

Description

Aug 2010 PFP2N70 / PFF2N70 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 10.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 5.5 Ω (Typ.) @VGS=10V APPLICATION  Low power battery chargers  Switch mode powe...

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