N-Channel MOSFET
Description
Feb. 2012
PFU2N70G / PFD2N70G
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 5.5 Ω (Typ.) @VGS=10V
APPLICATION
Low power battery chargers Switch mode p...
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