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PFD7N60EG

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N-Channel MOSFET

Description
PFU7N60EG / PFD7N60EG Green Package FEATURES  Originative New Design PFU7N60EG / PFD7N60EG 600V N-Channel MOSFET  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 17 nC (Typ.) BVDSS = 600 V RDS(on) = 1.20 Ω Drain  Gate  ● ◀▲ ● ●  Extended Safe ...


Wing On

PFD7N60EG

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