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PFJ10N80

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N-Channel MOSFET

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May 2007 PFJ10N80 / PFW10N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 55 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.92 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitabl...


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PFJ10N80

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