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PFW9N90

N-Channel MOSFET

Description

May 2007 PFJ9N90 / PFW9N90 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 55 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.12 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable ...

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PFW9N90 N-Channel MOSFET - Wing On

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