DatasheetsPDF.com

BC337

Part Number	BC337
Manufacturer	LGE
Description	TO-92 Bipolar Transistors
Published	Oct 8, 2018
Detailed Description	1. COLLECTOR 2. BASE 3. EMITTER BC337/338(NPN) TO-92 Bipolar Transistors TO-92 Features Power dissipation MAXIMUM RAT...
Datasheet	BC337 PDF File

Overview

1.
COLLECTOR 2.
BASE 3.
EMITTER BC337/338(NPN) TO-92 Bipolar Transistors TO-92 Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage BC337 BC338 VCEO Collector-Emitter Voltage BC337 BC338 VEBO IC PD Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Tj Junction Temperature Tstg Storage Temperature Value 50 30 45 25 5 800 625 150 -55-150 Units V V V mA mW ℃ ℃ Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage BC337 BC338 Collector-emitter breakdown voltage BC337 BC338 Emitter-base brea...

Similar Datasheet

BC300 (BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS - CDIL
BC300 NPN Silicon Transistor - Micro Electronics
BC301 (BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS - CDIL
BC301 NPN Silicon Transistor - Micro Electronics
BC302 (BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS - CDIL
BC302 Bipolar NPN Device - Seme LAB
BC302 NPN Silicon Transistor - Micro Electronics
BC303 PNP Silicon Transistor - Micro Electronics
BC303 Bipolar PNP Device - Seme LAB
BC303 PNP EXPITAXIAL PLANAR SILICON TRANSISTORS - CDIL

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)