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MD7IC2755NR1

Part Number	MD7IC2755NR1
Manufacturer	NXP
Description	RF LDMOS Wideband Integrated Power Amplifiers
Published	Oct 18, 2018
Detailed Description	Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2755N wideband integrated ...
Datasheet	MD7IC2755NR1 PDF File

Overview

Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2755N wideband integrated circuit is designed with on--chip matching that makes it usable from 2500 -- 2700 MHz.
This multi -- stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations.
• Typical Doherty WiMAX Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 80 mA, IDQ2B = 275 mA, VG2A = 1.
7 Vdc, Pout = 10 Watts Avg.
, f = 2700 MHz, OFDM 802.
16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 25 dB Power Added Efficiency — 25% Device Output Signal PAR — 8.
5 dB @ 0.
01% Probability on CC...

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MD7IC2755NR1 RF LDMOS Wideband Integrated Power Amplifiers - NXP

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