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2N3297

Motorola
Part Number 2N3297
Manufacturer Motorola
Description NPN silicon annular transistor
Published Nov 6, 2018
Detailed Description 32972N (SILICON) NPN silicon annular transistor for linear amplifier applications for 2 to 100 MHz. CASE 1 (TO·3) Colle...
Datasheet PDF File 2N3297 PDF File

2N3297
2N3297

Overview
32972N (SILICON) NPN silicon annular transistor for linear amplifier applications for 2 to 100 MHz.
CASE 1 (TO·3) Collector connected to case MAXIMUM RATINGS.
Rating Collector-Base Voltage Collector- Emitter Voltage Emitter-Base Voltage Collector Current (Continuous) Base-Current (Continuous) Power Input (PEP) Power Output (PEP) Total Device Dissipation @ 25°C Case Temperature Derating Factor above 25°C Junction Temperature Storage Temperature Range Symbol VCB VCES VEB IC ls Pin Pout PD TJ Tstg Value 60 60 3.
0 1.
5 500 5.
0 20.
0 Unit Vdc Vdc Vdc Adc mAdc Watts (PEP) Watts (PEP) 25.
0 167 175 -65 to +175 Watts mW;oC °c °C • The maximum ratlnp u given for de conditions can be exceeded on a pulae baala.
See electrical characterlstica 2-479 2N3297 (Continued) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Collector-Emitter Sustain Voltage Symbol Conditions V \11 CES(sus) It = 0.
250A, RBE =0 Collector Emitter-Open V 111 CEO(sus) IC = 0...


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