N-Channel MOSFET
Description
STB9NB50
N - CHANNEL ENHANCEMENT MODE Power MESH™ MOSFET
TYPE ST B9NB50
VDSS 500 V
RDS(on) < 0.85 Ω
ID 8.6 A
s TYPICAL RDS(on) = 0.75 Ω s EXTREMELY HIGH dv/dt CAPABILITY s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s VERY LOW INTRINSIC CAPACITANCE s GATE CHARGE MINIMIZED s LOW LEAKAGE CURRENT s APPLICATION O...
STMicroelectronics
B9NB50 PDF File
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