IGBT
Description
www.vishay.com
VS-GP250SA60S
Vishay Semiconductors
Insulated Gate Bipolar Transistor Trench PT IGBT, 600 V, 250 A
Proprietary Vishay IGBT Silicon “L Series”
SOT-227
PRIMARY CHARACTERISTICS
VCES IC DC VCE(on) typical at 100 A, 25 °C Speed
600 V 239 A at 90 °C
1.10 V DC to 1 kHz
Package
SOT-227
Circuit configuration
Single switch no diode
FEATURES ...
Similar Datasheet
- VS-GP250SA60S IGBT - Vishay
