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VS-GT120DA65U

Vishay
Part Number VS-GT120DA65U
Manufacturer Vishay
Description IGBT
Published Nov 21, 2018
Detailed Description www.vishay.com VS-GT120DA65U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 650 V, 120 A SOT-...
Datasheet PDF File VS-GT120DA65U PDF File

VS-GT120DA65U
VS-GT120DA65U

Overview
www.
vishay.
com VS-GT120DA65U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 650 V, 120 A SOT-227 PRIMARY CHARACTERISTICS VCES IC DC VCE(on) typical at 100 A, 25 °C IF DC Speed 650 V 120 A at 90 °C 1.
71 V 76 A at 90 °C 8 kHz to 30 kHz Package SOT-227 Circuit configuration Single switch with AP diode FEATURES • Trench IGBT technology with positive temperature coefficient • Square RBSOA • FRED Pt® antiparallel diodes with ultrasoft reverse recovery • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL pending • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 BENEFITS...


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