Half Bridge - Trench IGBT
Description
www.vishay.com
VS-GT200TP065N
Vishay Semiconductors
INT-A-PAK, Half Bridge - Trench IGBT, 200 A
INT-A-PAK
PRIMARY CHARACTERISTICS
VCES
IC (DC) at TC = 80 °C
VCE(on) (typical) at IC = 200 A, TJ = 25 °C
Speed
650 V 166 A 1.9 V 8 kHz to 30 kHz
Package
INT-A-PAK
Circuit configuration
Half bridge
FEATURES Trench IGBT Very low VCE(on) 5 μs short c...
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