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AFN1602E

Alfa-MOS
Part Number AFN1602E
Manufacturer Alfa-MOS
Description 20V N-Channel Enhancement Mode MOSFET
Published Nov 22, 2018
Detailed Description Alfa-MOS Technology General Description AFN1602E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Datasheet PDF File AFN1602E PDF File

AFN1602E
AFN1602E

Overview
Alfa-MOS Technology General Description AFN1602E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN1.
0X0.
6-3L ) AFN1602E 20V N-Channel Enhancement Mode MOSFET Features 20V/0.
8A,RDS(ON)=360mΩ@VGS=4.
5V 20V/0.
7A,RDS(ON)=420mΩ@VGS=2.
5V 20V/0.
5A,RDS(ON)=560mΩ@VGS=1.
8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ESD Protected DFN1.
0X0.
6-3L package design ...


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