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AFN4286WS

Alfa-MOS
Part Number AFN4286WS
Manufacturer Alfa-MOS
Description N-Channel MOSFET
Published Nov 26, 2018
Detailed Description Alfa-MOS Technology General Description AFN4286WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to...
Datasheet PDF File AFN4286WS PDF File

AFN4286WS
AFN4286WS

Overview
Alfa-MOS Technology General Description AFN4286WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOP-8P ) AFN4286WS 40V N-Channel Enhancement Mode MOSFET Features 40V/8A,RDS(ON)= 33mΩ@VGS=10V 40V/5A,RDS(ON)= 38mΩ@VGS=4.
5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Synchronous Rectification CCFL Inverter Car Charger POL, IBC - Secondary Side Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D...


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