P-Channel Enhancement Mode Power MOSFET
Description
HM9435B
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM9435B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
● VDS = -20V,ID = -5A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS...
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