P-Channel Enhancement Mode Power MOSFET
Description
M
P-Channel Enhancement Mode Power MOSFET
Description
The HM4407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications.
General Features
● VDS = -30V,ID = -12A RDS(ON) < 25mΩ @ VGS=-4.5V RDS(ON) < 16mΩ @ VGS=-10V
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H&M Semiconductor
HM4407 PDF File
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