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HM4441

H&M Semiconductor
Part Number HM4441
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description +0 P-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology and design to...
Datasheet PDF File HM4441 PDF File

HM4441
HM4441

Overview
+0 P-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS =-55V,ID =-5A RDS(ON) <80mΩ @ VGS=-10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● DC-DC Converter +0 Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package +0 +0...


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