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HM4953B

H&M Semiconductor
Part Number HM4953B
Manufacturer H&M Semiconductor
Description Dual P-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description HM4953B Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953B uses advanced trench technology to provid...
Datasheet PDF File HM4953B PDF File

HM4953B
HM4953B

Overview
HM4953B Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
DD GG GENERAL FEATURES ● VDS = -20V,ID = -5A RDS(ON) < 110mΩ @ VGS=-4.
5V RDS(ON) < 60mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package SS Schematic diagram HM4953B Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOP-8 top view Package Marking And Ordering Information Device Marking Device Device Package HM...


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