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HM4805B

H&M Semiconductor

Dual P-Channel Enhancement Mode Power MOSFET

Description
HM4805B Dual P-Channel Enhancement Mode Power MOSFET Description The HM4805B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -12A RDS(ON) =11.5m Ω @Vgs=10V RDS(ON) =15m Ω ...


H&M Semiconductor

HM4805B

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