N & P-Channel Enhancement Mode Power MOSFET
Description
HM6604
N and P-Channel Enhancement Mode Power MOSFET
Description
The HM6604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features
● N-Channel VDS = 20V,ID =3A RDS(ON) < 65mΩ @ VGS=4.5V RDS(ON) <...
Similar Datasheet
