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HM2310PR

Part Number	HM2310PR
Manufacturer	H&M Semiconductor
Description	N-Channel Enhancement Mode Power MOSFET
Published	Nov 27, 2018
Detailed Description	M Description The HM2310PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ...
Datasheet	HM2310PR PDF File

Overview

M Description The HM2310PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other switching application.
General Feature ● VDS =60V,ID =4.
0A RDS(ON) <100mΩ @ VGS=10V RDS(ON) < 120mΩ @ VGS=4.
5V ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Application ●Battery switch ●DC/DC converter D G S Schematic diagram SOT-89 -3L top view Package Marking and Ordering Information Device Marking Device Device Package HM2310PR HM2310PR SOT-89-3L Reel Size Ø180mm Tape width 12mm Quantity 1000units Absolut...

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