N-Channel Enhancement Mode Power MOSFET
Description
The HM3N10PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS = 100V,ID = 3A RDS(ON) <240mΩ @ VGS=10V (Typ:210mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanc...
