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HM4N10PR

H&M Semiconductor
Part Number HM4N10PR
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Nov 27, 2018
Detailed Description N-Channel Enhancement Mode Power MOSFET Description The HM4N10PR uses advanced trench technology and design to provide e...
Datasheet PDF File HM4N10PR PDF File

HM4N10PR
HM4N10PR

Overview
N-Channel Enhancement Mode Power MOSFET Description The HM4N10PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS = 100V,ID = 4A RDS(ON) <160mΩ @ VGS=10V (Typ:136mΩ) RDS(ON) <170mΩ @ VGS=4.
5V (Typ:140mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply HM4N10PR Schematic diagram HM4N10PR SOT-89 -3L top view Package Marking and Ordering Information Device Marking ...


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