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HM4402E

H&M Semiconductor

N-Channel Enhancement Mode Power MOSFET


Description
Description The HM4402E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =14A RDS(ON) <7 mΩ @ VGS=4.5V RDS(ON) <9 mΩ @ VGS=2.5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surfac...



H&M Semiconductor

HM4402E

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