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HM4438

Part Number	HM4438
Manufacturer	H&M Semiconductor
Description	N-Channel Enhancement Mode Power MOSFET
Published	Nov 27, 2018
Detailed Description	+0 N-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology and design to pro...
Datasheet	HM4438 PDF File

Overview

+0 N-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features ● VDS = 60V,ID =9A RDS(ON) < 16mΩ @ VGS=10V (Typ:12mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses Schematic diagram Application ● Power switching application ● Load switch Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package +0 SOP-8 Reel Size - Tape width - Quanti...

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